Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2006-08-14
2008-12-16
Chambliss, Alonzo (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C438S197000, C438S284000, C257S288000, C257S341000, C257S356000
Reexamination Certificate
active
07465610
ABSTRACT:
A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking
on braking control is also provided.
REFERENCES:
patent: 5408150 (1995-04-01), Wilcox
patent: 6369559 (2002-04-01), Ashrafzadeh
patent: 6747300 (2004-06-01), Nadd et al.
patent: 7115922 (2006-10-01), Nadd et al.
de Frutos Xavier
Lee Chik Yam
Nadd Bruno C.
Thiery Vincent
Chambliss Alonzo
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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