Semiconductor device

Details Semiconductor device Semiconductor device

2005-06-06

2008-12-16

Rose, Kiesha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000

Reexamination Certificate

active

07465998

ABSTRACT:
A semiconductor device includes a plate of semiconductor layer, an insulator layer formed on the plate of semiconductor layer and brought into contact with the plate of semiconductor layer by at least two adjacent faces, a thickness of the insulator layer in the vicinity of a boundary line between the two adjacent faces being larger than that of the insulator layer in a region other than the vicinity of the boundary line, and a band of conductor layer formed facing a middle portion of the plate-like semiconductor layer via the insulator layer.

REFERENCES:
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patent: 08-172198 (1996-07-01), None
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patent: 10-93093 (1998-04-01), None
patent: 2001-77364 (2001-03-01), None
patent: 2003-209247 (2003-07-01), None
patent: 2003-289141 (2003-10-01), None
patent: WO 2005/074035 (2005-08-01), None
Notification of Reasons for Rejection issued Dec. 4, 2007 in Japanese Application No. 2004-273509 with English translation (7 pages).

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