Transistors and manufacturing methods thereof

Details Transistors and manufacturing methods thereof Transistors and manufacturing methods thereof

2007-03-01

2008-11-04

Baumeister, Bradley W. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S408000

Reexamination Certificate

active

07446377

ABSTRACT:
Transistors and manufacturing methods thereof are disclosed. An example transistor includes a semiconductor substrate divided into device isolation regions and a device active region. The example transistor includes a gate insulating film formed in the active region of the semiconductor substrate, a gate formed on the gate insulating film, a channel region formed in the semiconductor substrate and overlapping the gate, and LDD regions formed in the semiconductor substrate and at both sides of the gate, centering the gate. In addition, the example transistor includes source and drain regions formed under the LDD regions, offset regions formed in the semiconductor substrate and between the channel region and LDD regions, and gate spacers formed at both sidewalls of the gate.

REFERENCES:
patent: 5612234 (1997-03-01), Ha
patent: 5757045 (1998-05-01), Tsai et al.
patent: 5936278 (1999-08-01), Hu et al.
patent: 6121099 (2000-09-01), Fulford, Jr. et al.
patent: 6144071 (2000-11-01), Gardner et al.
patent: 6147383 (2000-11-01), Kuroda
patent: 6214670 (2001-04-01), Shih et al.
patent: 6362062 (2002-03-01), Nandakumar
patent: 6482660 (2002-11-01), Conchieri et al.
patent: 2003/0011029 (2003-01-01), Matsuda
patent: 2-74076 (1990-03-01), None
Hisao Hayashi; MOS Type Transistor; Patent Abstracts of Japan; Publication No. 02-074076; Publication Date Mar. 14, 1990; Japan Patent Office.

Affiliated with

Also associated with

Rating

Transistors and manufacturing methods thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistors and manufacturing methods thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors and manufacturing methods thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4025102