Semiconductor device having super junction structure

Details Semiconductor device having super junction structure Semiconductor device having super junction structure

2006-03-03

2008-12-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S328000, C257S343000

Reexamination Certificate

active

07465990

ABSTRACT:
A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.

REFERENCES:
patent: 6639260 (2003-10-01), Suzuki et al.
patent: 6700141 (2004-03-01), Iwamoto et al.
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 2003/0224588 (2003-12-01), Yamaguchi et al.
patent: 2004/0016959 (2004-01-01), Yamaguchi et al.
patent: 2005/0077572 (2005-04-01), Yamaguchi et al.
patent: WO-2005020275 (2005-03-01), None
U.S. Appl. No. 11/211,524, filed Aug. 26, 2005, Yamaguchi et al.
U.S. Appl. No. 11/301,349, filed Dec. 13, 2005, Yamaguchi et al.

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