Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-12-28
2008-11-25
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S191000, C365S201000, C365S230060
Reexamination Certificate
active
07457176
ABSTRACT:
A semiconductor memory is provided in which a verification result of a circuit operation in a test mode can be output from a memory module complying with the FB-DIMM even if the semiconductor memory is mounted on the memory module. The semiconductor memory includes: a command decoding section that decodes a command to start a read mode in which stored data is output or a test mode in which a predetermined circuit operation is executed and then an execution result thereof is output; a signal generating section that, based on the decoded command, generates a first or second data strobe signal showing an output timing of the stored data or the execution result; and a data-strobe-signal outputting section that outputs the first data strobe signal to an external terminal in the read mode and that outputs the second data strobe signal to the external terminal in the test mode.
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Elpida Memory Inc.
Nguyen Viet Q.
Sughrue & Mion, PLLC
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