Thin film transistors including indolocarbozoles

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S059000, C257S072000, C257SE51028, C257SE51035

Reexamination Certificate

active

07456424

ABSTRACT:
A thin film transistor composed of a semiconductor layer including an optionally substituted indolocarbazole.

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patent: 19831427 (2000-01-01), None
patent: 906948 (1999-04-01), None
Wu et al., “Indolo[3,2-b]carbazole-Based Thin-Film Transistor with High Mobility and Stability”, 2004, J. Am. Chem. Soc., vol. 127, pp. 614-618.
Li et al., “Novel Peripherally Substituted Indolo[3,2-b]carbazole for High-Mobility Organic Thin-Film Transistors,” 2005, Advanced Materials, vol. 17, No. 7, pp. 849-852.
Dimitrakopoulos et al., Organic Thin Film Transistors for Large Area Electronics, 2002, Advanced Materials, vol. 14, No. 2, pp. 99-117.
Beng S. Ong et al., U.S. Appl. No. 11/011,678, filed Dec. 14, 2004, titled “Compound With Indolocarbazole Moieties and Devices Containing Such Compound” is a continuation-in-part application of co-pending Beng S. Ong et al., U.S. Appl. No. 11/011,678, filed Dec. 14, 2004.
Yuning Li et al., U.S. Appl. No. 11/011,901, filed Dec. 14, 2004, titled “Process to Form Compound With Indolocarbazole Moieties.”
Christos D. Dimitrakopoulos et al., “Organic Thin Film Transistors for Large Area Electronics,”Adv. Mater., vol. 14, No. 2, pp. 99-117 (2002).
Salem Wakim et al., “Organic Microelectronics: Design, Synthesis, and Characterization of 6, 12-Dimethylindolo[3,2-b]Carbazoles,”Chem. Mater. vol. 16, No. 23, pp. 4386-4388 (published on web Jul. 7, 2004).
Nan-Xing Hu et al., “5-11-Dihydro-5,11-di-1-naphthylindolo[3,2-b]carbazole: Atropisomerism in a Novel Hole-Transport Molecule for Organic Light-Emitting Diodes,”J. Am. Chem. Soc., vol. 121, pp. 5097-5098 (1999).

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