High voltage GaN-based transistor structure

Details High voltage GaN-based transistor structure High voltage GaN-based transistor structure

2006-02-23

2008-12-02

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C257S194000

Reexamination Certificate

active

07459356

ABSTRACT:
The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.

REFERENCES:
patent: 5608353 (1997-03-01), Pratt
patent: 5629648 (1997-05-01), Pratt
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6130579 (2000-10-01), Iyer et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6191656 (2001-02-01), Nadler
patent: 6229395 (2001-05-01), Kay
patent: 6265943 (2001-07-01), Dening et al.
patent: 6271727 (2001-08-01), Schmukler
patent: 6285239 (2001-09-01), Iyer et al.
patent: 6307364 (2001-10-01), Augustine
patent: 6313705 (2001-11-01), Dening et al.
patent: 6329809 (2001-12-01), Dening et al.
patent: 6333677 (2001-12-01), Dening
patent: 6356150 (2002-03-01), Spears et al.
patent: 6369656 (2002-04-01), Dening et al.
patent: 6369657 (2002-04-01), Dening et al.
patent: 6384433 (2002-05-01), Barratt et al.
patent: 6392487 (2002-05-01), Alexanian
patent: 6404287 (2002-06-01), Dening et al.
patent: 6521998 (2003-02-01), Teraguchi et al.
patent: 6525611 (2003-02-01), Dening et al.
patent: 6528983 (2003-03-01), Augustine
patent: 6560452 (2003-05-01), Shealy
patent: 6566963 (2003-05-01), Yan et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6701134 (2004-03-01), Epperson
patent: 6701138 (2004-03-01), Epperson et al.
patent: 6720831 (2004-04-01), Dening et al.
patent: 6724252 (2004-04-01), Ngo et al.
patent: 6750482 (2004-06-01), Seaford et al.
patent: 2003/0218183 (2003-11-01), Micovic et al.

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