Semiconductor structure with self-aligned device contacts

Details Semiconductor structure with self-aligned device contacts Semiconductor structure with self-aligned device contacts

2006-07-26

2008-12-30

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21577

Reexamination Certificate

active

07470615

ABSTRACT:
Disclosed are embodiments of a semiconductor structure with a partially self-aligned contact in lower portion of the contact being enlarged to reduce resistance without impacting device yield. The semiconductor structure includes a substrate; at least two gate electrodes on the substrate; sidewall spacers adjacent to each of the gate electrodes; a silicide region on the substrate between the gate electrodes; and a contact on the silicide region, wherein the contact includes a self-aligned lower portion on the silicide region, which extends between the sidewall spacers and follows contours of the sidewall spacers, and an upper portion, and wherein the self-aligned lower portion includes a bottom surface adjacent to the silicide region and a top surface adjacent to the upper portion, with the upper portion being narrower than the top surface. Additionally, the structure optionally incorporates a thick middle-of-the-line (MOL) nitride stress film to enhance carrier mobility.

REFERENCES:
patent: 6057581 (2000-05-01), Doan
patent: 6248643 (2001-06-01), Hsieh et al.
patent: 6284641 (2001-09-01), Parekh
patent: 7078758 (2006-07-01), Shinkawata
patent: 7315051 (2008-01-01), Cheng
patent: 2001/0001717 (2001-05-01), Kumauchi et al.
patent: 2002/0146904 (2002-10-01), Buynoski et al.
patent: 2004/0043517 (2004-03-01), Sashida
patent: 2004/0164418 (2004-08-01), Sugiura et al.
patent: 2005/0003308 (2005-01-01), Frohlich et al.
patent: 2006/0226461 (2006-10-01), Shinkawata
patent: 2007/0224810 (2007-09-01), Graf
patent: 2004128188 (2004-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor structure with self-aligned device contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure with self-aligned device contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure with self-aligned device contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4022309