Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-01-13
2008-11-18
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27131, C349S144000
Reexamination Certificate
active
07453086
ABSTRACT:
A thin film transistor panel is provided. The thin film transistor panel includes: a substrate; gate lines formed on the substrate; data lines insulated from the gate lines and intersecting the gate lines; thin film transistors which are connected to the gate lines and the data lines and have drain electrodes; capacitive coupling electrodes connected to the drain electrodes; and pixel electrodes which are formed in the pixels surrounded by the gate lines and the data lines and include first pixel electrodes connected to the drain electrodes and second pixel electrodes which are separated from the first pixel electrodes and overlap with the capacitive coupling electrodes, wherein the first and second pixel electrodes of different pixel electrodes have a left-right symmetrical structure.
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Jung Mee-Hye
Kim Hyun-Wuk
Lee Chang-Hun
Lyu Jae-Jin
Shin Kyoung-Ju
MacPherson Kwok & Chen & Heid LLP
Malsawma Lex
Samsung Electronics Co,. Ltd.
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