Method of forming an etch indicator layer for reducing etch...

Details Method of forming an etch indicator layer for reducing etch... Method of forming an etch indicator layer for reducing etch...

2007-03-20

2008-12-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S638000, C438S673000, C438S042000

Reexamination Certificate

active

07462563

ABSTRACT:
By incorporating an etch control material after the formation of a material layer to be patterned, an appropriate material having a highly distinctive radiation wavelength may be used for generating a distinctive endpoint detection signal during an etch process. Advantageously, the material may be incorporated by ion implantation which provides reduced non-uniformity compared to etch non-uniformities, while the implantation process provides the potential for introducing even very “exotic” implantation species. In some embodiments, the substrate-to-substrate uniformity of the patterning of dual damascene structures may be increased.

REFERENCES:
patent: 5937301 (1999-08-01), Gardner et al.
patent: 7005305 (2006-02-01), Grasshoff et al.
patent: 2003/0211738 (2003-11-01), Nagata
patent: 2004/0127016 (2004-07-01), Hoog et al.
patent: 2004/0229426 (2004-11-01), Lee et al.
patent: 2006/0249479 (2006-11-01), Okubo et al.
patent: 0 304 729 (1993-03-01), None

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