Semiconductor memory and fabrication method for the same

Details Semiconductor memory and fabrication method for the same Semiconductor memory and fabrication method for the same

2005-09-15

2008-12-30

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S321000, C257S315000, C257S316000, C257S317000, C438S201000

Reexamination Certificate

active

07470947

ABSTRACT:
A semiconductor memory includes memory cell transistors comprising a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors comprising a first p-type source region and a first p-type drain region, a first gate insulating film, and a first gate electrode of an n conductivity type having the same dose of a first p-type impurity as with the first p-type source region; and high-voltage transistors comprising a second p-type source region and a second p-type drain region, a second gate insulating film thicker than the first gate insulating film, and a second gate electrode of an n conductivity type having the same dose of a second p-type impurity as with the second p-type source region.

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Kyung-Joong Joo, et al., “A New Cobalt Polycide Technology for High Density NAND Flash Memories”, 2001 NVSMW, Aug. 2001, pp. 64-66.

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