Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reissue Patent
2003-07-01
2008-12-09
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257SE21664, C257SE27104, C257S296000
Reissue Patent
active
RE040602
ABSTRACT:
The present invention provides a semiconductor device including a semiconductor element and a dummy semiconductor element adjacent to the semiconductor element. When the semiconductor element is a capacitor element including a bottom electrode, a top electrode and a dielectric layer between the electrodes, a dummy capacitor element also has dummy electrodes and a dummy dielectric layer between the dummy electrodes. The dummy electrode is located so that a space between the top electrode of the capacitor element ad the dummy top electrode is in a predetermined range (e.g. 0.3 μm to 14 μm). The dummy capacitor element prevents the capacitor dielectric layer from degrading since the collisions of the etching ions with the capacitor dielectric layer in a dry etching process is suppressed.
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patent: 5696394 (1997-12-01), Jones et al.
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patent: 6153476 (2000-11-01), Inaba et al.
patent: RE39221 (2006-08-01), Raffa et al.
patent: 9-321248 (1997-12-01), None
Matsuda Akihiro
Nagano Yoshihisa
Uemoto Yasuhiro
Dickey Thomas L
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
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