Micromechanical sensor

Details Micromechanical sensor Micromechanical sensor

2004-12-20

2008-10-14

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S415000, C257S419000, C257SE21521

Reexamination Certificate

active

07435991

ABSTRACT:
A micromechanical sensor and a method for manufacturing same are described. A secure diaphragm restraint, independent of fluctuations in the cavern etching process due to the process technology, and a free design of the diaphragm are made possible by designing a suitable connection of the diaphragm in an oxide layer created by local oxidation. The micromechanical sensor includes, for example, a substrate, an external oxide layer formed in a laterally external area in the substrate, a diaphragm having multiple perforation holes formed in a laterally internal diaphragm area, a cavern etched in the substrate beneath the diaphragm, whereby the diaphragm is suspended in a suspension area of the external oxide layer which tapers toward connecting points of the diaphragm and the diaphragm is situated in its vertical height between a top side and a bottom side of the external oxide layer.

REFERENCES:
patent: 6725725 (2004-04-01), Werner et al.
patent: 2003/0127699 (2003-07-01), Artmann et al.
patent: 100 52 419 (2002-05-01), None
patent: WO 03/016203 (2003-02-01), None

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