Ferromagnetic memory device

Details Ferromagnetic memory device Ferromagnetic memory device

1993-07-23

1994-07-12

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 33, 365 55, 365 66, 365 84, 365 98, 365154, G11C 1702

Patent

active

053294866

ABSTRACT:
A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).

REFERENCES:
patent: 3155948 (1964-11-01), Stern; M. M.
patent: 3419855 (1968-12-01), Nelson
patent: 3753485 (1971-04-01), Ballard
patent: 4103340 (1978-06-01), Fayling
patent: 4831427 (1989-05-01), Coleman, Jr.
patent: 4887236 (1989-12-01), Schloemann

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