Semiconductor integrated circuit device and a method of...

Details Semiconductor integrated circuit device and a method of... Semiconductor integrated circuit device and a method of...

2006-10-23

2008-08-12

Warren, Matthew E. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S297000, C257S298000, C257S300000, C257SE27098

Reexamination Certificate

active

07411238

ABSTRACT:
In order to improve the soft error resistance of a memory cell of an SRAM without increasing its chip size in deep through-holes formed by perforating a silicon oxide film, there is a silicon nitride film and a silicon oxide film, a capacitor element having a TIN film serving as a lower electrode. This capacitor element is connected between a storage node and a supply voltage line, between a storage node and a reference voltage line, or between storage nodes of the memory cell of the SRAM.

REFERENCES:
patent: 5780910 (1998-07-01), Hashimoto et al.
patent: 6635937 (2003-10-01), Ootsuka et al.
patent: 6649456 (2003-11-01), Liaw

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