Plasma etching method and apparatus, control program for...

Details Plasma etching method and apparatus, control program for... Plasma etching method and apparatus, control program for...

2006-02-15

2008-08-26

Deo, Duy-Vu (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S041000, C438S710000

Reexamination Certificate

active

07416676

ABSTRACT:
A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface of the mask is enlarged compared to opening dimensions of the top and the bottom surface of the mask and etching the silicon layer by using a halogen containing gas. A gaseous mixture containing HBr gas, NF3gas and O2gas is used as the halogen containing gas. A hole or a trench having an opening diameter or an opening width equal to or smaller than 0.2 μm is formed in the etching target layer. Further, a hole or a trench having an aspect ratio equal to or greater than forty is formed in the etching target layer.

REFERENCES:
patent: 2001/0006245 (2001-07-01), Yunogami et al.
patent: 2004/0035826 (2004-02-01), Adachi et al.
patent: 2005/0079724 (2005-04-01), Ho et al.
patent: 04215432 (1992-08-01), None

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