Semiconductor structure including mixed rare earth oxide...

Details Semiconductor structure including mixed rare earth oxide... Semiconductor structure including mixed rare earth oxide...

2004-11-30

2008-10-07

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S009000, C257S015000

Reexamination Certificate

active

07432550

ABSTRACT:
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

REFERENCES:
patent: 3986197 (1976-10-01), Ablassmeier
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4980339 (1990-12-01), Setsune et al.
patent: 5019529 (1991-05-01), Takasaki
patent: 5037774 (1991-08-01), Yamawaki et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5478653 (1995-12-01), Guenzer
patent: 5600154 (1997-02-01), Shimizu et al.
patent: 5643804 (1997-07-01), Arai et al.
patent: 5808319 (1998-09-01), Gardner et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5930612 (1999-07-01), Ito
patent: 6045626 (2000-04-01), Yano et al.
patent: 6096434 (2000-08-01), Yano et al.
patent: 6235563 (2001-05-01), Oka et al.
patent: 6242298 (2001-06-01), Kawakubo
patent: 6248621 (2001-06-01), Wilk et al.
patent: 6258459 (2001-07-01), Noguchi et al.
patent: 6281559 (2001-08-01), Yu et al.
patent: 6348373 (2002-02-01), Ma et al.
patent: 6376337 (2002-04-01), Wang et al.
patent: 6404027 (2002-06-01), Hong et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6528377 (2003-03-01), Mihopoulos et al.
patent: 6569240 (2003-05-01), Nishikawa et al.
patent: 6610548 (2003-08-01), Ami et al.
patent: 6696309 (2004-02-01), Yamanaka et al.
patent: 6709935 (2004-03-01), Yu
patent: 6756277 (2004-06-01), Yu
patent: 6768175 (2004-07-01), Morishita et al.
patent: 6933566 (2005-08-01), Bojarczuk, Jr. et al.
patent: 2002/0013011 (2002-01-01), Yamanaka et al.
patent: 2002/0195602 (2002-12-01), Klosowiak
patent: 2003/0057432 (2003-03-01), Gardner et al.
patent: 2005/0166834 (2005-08-01), Atanackovic
patent: 2005/0233529 (2005-10-01), Pomarede et al.
“Crystalline Oxides on Silicon: The First Five Monolayers”, Rodney A. McKee et al., Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998, pp. 3014-3017.
“Epitaxial Ceo2 on Silicon Substrates and the Potential of Si/ceo2/si for SOI Structures”, A.H. Morshed et al. Mat. Res. Soc. Symp V474,339(1197).
J. Haeni, D.G. Schlom, Materials Research Society 2001 meeting, Apr. 2001, San Francisco, “LaA103 Derivative Structures for Alternative Gate Dielectrics”.
Sze, S. M. Physics of Semiconductor Devices, 2nd Ed. New York: John Wiley & Sons, 1981, p. 29.

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