Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-23
2008-08-05
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S333000, C257S336000, C257S342000, C257S407000, C257S408000, C257S492000, C257S493000, C257SE29027, C257SE29066, C257SE29197, C257SE29256, C257SE29268
Reexamination Certificate
active
07408234
ABSTRACT:
An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate; a semiconductor layer having a P−type active region that is formed on the supporting substrate, interposing a buried oxide film between the semiconductor layer and the supporting substrate; and a gate electrode that is formed on the semiconductor layer, interposing a gate oxide film and a part of a LOCOS film between the gate electrode and the semiconductor layer, wherein the P−type active region has: an N+type source region; a P type body region; a P+type back gate contact region; an N type drain offset region; an N+type drain contact region; and an N type drain buffer region that is formed in a limited region between the N type drain offset region and the P type body region, and the N type drain buffer region is in contact with a source side end of the LOCOS film and is shallower than the N type drain offset region.
REFERENCES:
patent: 6258674 (2001-07-01), Kwon et al.
patent: 6380566 (2002-04-01), Matsudai et al.
patent: 6599782 (2003-07-01), Kikuchi et al.
patent: 2004/0238913 (2004-12-01), Kwon et al.
patent: 2001-102586 (2001-04-01), None
Ichijo Hisao
Ikuta Teruhisa
Ogura Hiroyoshi
Sato Yoshinobu
Cruz Leslie Pilar
Matsushita Electric - Industrial Co., Ltd.
Tran Minh-Loan
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4017324