Method of providing a pre-patterned high-k dielectric film

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S637000, C438S780000, C257SE21170, C257SE21229, C257SE21311, C257SE21347, C257SE21397

Reexamination Certificate

active

07435675

ABSTRACT:
A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a pattern that is a mirror image of a pattern of the pre-patterned high-k dielectric film; disposing the template onto the support layer; providing a high-k precursor material inside the template openings; curing the high-k precursor material inside the template openings to yield a cured film; and removing the template from the support layer after curing to leave the cured film on the conductive film.

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