Ruthenium containing layer deposition method

Details Ruthenium containing layer deposition method Ruthenium containing layer deposition method

2005-09-15

2008-10-21

Meeks, Timothy (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C427S255310

Reexamination Certificate

active

07438949

ABSTRACT:
An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.

REFERENCES:
patent: 5248496 (1993-09-01), Schuster et al.
patent: 5415890 (1995-05-01), Kloiber et al.
patent: 5554226 (1996-09-01), Okase et al.
patent: 5614003 (1997-03-01), Mallory, Jr.
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5830805 (1998-11-01), Shacham-Diamand et al.
patent: 5885749 (1999-03-01), Huggins et al.
patent: 6036741 (2000-03-01), Shindo et al.
patent: 6065424 (2000-05-01), Shacham-Diamand et al.
patent: 6091099 (2000-07-01), Kiyotoshi et al.
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6103393 (2000-08-01), Kodas et al.
patent: 6107199 (2000-08-01), Allen et al.
patent: 6110530 (2000-08-01), Chen et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6155540 (2000-12-01), Takamatsu et al.
patent: 6165912 (2000-12-01), McConnell et al.
patent: 6171661 (2001-01-01), Zheng et al.
patent: 6197181 (2001-03-01), Chen
patent: 6197688 (2001-03-01), Simpson
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6245670 (2001-06-01), Cheung et al.
patent: 6258270 (2001-07-01), Hilgendorff et al.
patent: 6258707 (2001-07-01), Uzoh
patent: 6277263 (2001-08-01), Chen
patent: 6342733 (2002-01-01), Hu et al.
patent: 6344410 (2002-02-01), Lopatin et al.
patent: 6428673 (2002-08-01), Ritzdorf et al.
patent: 6431190 (2002-08-01), Oka et al.
patent: 6436267 (2002-08-01), Carl et al.
patent: 6441492 (2002-08-01), Cunningham
patent: 6451665 (2002-09-01), Yunogami et al.
patent: 6458183 (2002-10-01), Phillips et al.
patent: 6503834 (2003-01-01), Chen et al.
patent: 6517894 (2003-02-01), Hongo et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6537461 (2003-03-01), Nakahara et al.
patent: 6573606 (2003-06-01), Sambucetti et al.
patent: 6586161 (2003-07-01), Futase et al.
patent: 6588437 (2003-07-01), Higashi
patent: 6605874 (2003-08-01), Leu et al.
patent: 6607988 (2003-08-01), Yunogami et al.
patent: 6649211 (2003-11-01), Lyons et al.
patent: 6709563 (2004-03-01), Nagai et al.
patent: 6737221 (2004-05-01), Futase et al.
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6753133 (2004-06-01), Ono et al.
patent: 6756682 (2004-06-01), Sinha et al.
patent: 6787450 (2004-09-01), Morgan et al.
patent: 6800542 (2004-10-01), Kim
patent: 6852635 (2005-02-01), Satta et al.
patent: 2002/0176927 (2002-11-01), Kodas et al.
patent: 2002/0184969 (2002-12-01), Kodas et al.
patent: 2003/0075808 (2003-04-01), Inoue et al.
patent: 2003/0207214 (2003-11-01), Futase et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2004/0013799 (2004-01-01), Kim et al.
patent: 2004/0113277 (2004-06-01), Chiras et al.
patent: 2004/0265501 (2004-12-01), Choi et al.
patent: 2005/0009346 (2005-01-01), Miyajima
patent: 2005/0081787 (2005-04-01), Im et al.
patent: 2005/0089748 (2005-04-01), Ohlsen et al.
patent: 2005/0238808 (2005-10-01), Gatineau et al.
patent: 2005/0252449 (2005-11-01), Nguyen et al.
patent: 2006/0102078 (2006-05-01), Fairbairn et al.
patent: 2006/0115590 (2006-06-01), Suzuki et al.
Sankar et al, Low temperature chemical vapour deposition of ruthenium and ruthenium dioxide on polymer surfaces, J. Mater. Chem. 1999, p. 2439-2444.
Peck et al, Chemical vapor deposition of novel precursors for advanced capacitor electrodes, PraxAir, Inc.
Hoover, Cynthia A., et al. “Advanced Ruthenium Precursors for Thin Film Deposition” Praxair Electronics Publication.
Shacham-Diamand, Yosi, et al. “Integrated Electroless Metallization for ULSI” Electrochimica Acta 44 (1999) 3639-3649.
Over, H. “Ruthenium Dioxide, a Fascinating Material for Atomic Scale Surface Chemistry” Appl. Phys. A 75 (2002), 37-44.
Sankar, Jayasree, et al. “Low Temperature Chemical Vapour Deposition of Ruthenium and Ruthenium Dioxide on Polymer Surfaces” Journal of Materials Chemistry 9 (1999), 2439-2444.
Peck, John, et al. “Chemical Vapor Deposition of Novel Precursors for Advanced Capacitor Electrodes” Praxair Electronics Publication.
Swider-Lyons, et al. “Selective Vapor Deposition of Hydrous RuO2Thin Films”, Journal of The Electrochemcial Society, 152-3 (2005) C158-C162.
Shih, C.H., et al. “Direct Plating of Cu on ALD TaN for 45nm-node Cu BEOL Metallization”. IEEE, 2004.
Colomer, et al., “Structural, Microstructural, and Electrical Transport Properties of TiO2—RuO2Ceramic Materials Obtained by Polymeric Sol-Gel Route,” Chem. Mater. 2000, 12, pp. 923-930.
Hoover, Cynthia A., et al. “Advanced Ruthanium Precursors for Thin Film Deposition” Praxair Electronics Publication. “No Date”.
Shacham-Diamand, Yosi, et al. “Integrated Electroless Metallization for ULSI” Electrochimica Acta 44 (1999) 3639-3649.
Over, H. “Ruthenium Dioxide, a Fascinating Material for Atomic Scale Surface Chemistry” Appl. Phys. A 75 (2002), 37-44.
Sankar, Jayasree, et al. “Low Temperature Chemical Vapour Deposition of Ruthenium and Ruthenium Dioxide on Polymer Surfaces” Journal of Materials Chemistry 9 (1999), 2439-2444.
Peck, John, et al. “Chemical Vapor Deposition of Novel Precursors for Advanced Capacitor Electrodes” Praxair Electronics Publication.
Swider-Lyons, et al. “Selective Vapor Deposition of Hydrous RuO2Thin Films”, Journal of The Electrochemical Society, 152-3 (2005) C158-C162.
Shih, C.H., et al. “Direct Plating of Cu on ALD TaN for 45nm-node Cu BEOL Metalization”, IEEE, 2004.

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