Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2002-06-19
2008-10-28
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S782000, C257S783000, C257S780000, C257S781000, C257S737000, C257S738000, C257SE23021, C257SE23069, C438S106000, C438S107000, C438S110000, C438S125000, C438S126000, C438S127000
Reexamination Certificate
active
07443041
ABSTRACT:
A method of packaging a microchip device, an interposer for packaging, and a packaged microchip device. An interposer is placed on microchip devices. The interposer includes an aperture which extends from the interposer surface where external electrical contacts are located on the surface of the microchip devices. Electrical contacts on the microchip device surface are accessible through the aperture in order to electrically connect the electrical contacts with the external electrical contacts of the interposer. The aperture is divided into at least two openings or aperture regions, separated by a bridge. This facilitates the handling of the interposer.
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English language Abstract of JP 2000-208540.
English language Abstract of JP 2000-260791.
English language Abstract of DE 10127009.
English language Abstract of JP 8-306817.
English language Abstract of JP 2-017665.
English language Abstract of JP 2003-234436.
Greenblum & Bernstein P.L.C.
Thai Luan
United Test & Assembly Center Limited
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