Semiconductor device with increased channel length and...

Details Semiconductor device with increased channel length and... Semiconductor device with increased channel length and...

2005-10-21

2008-10-21

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S177000

Reexamination Certificate

active

07439104

ABSTRACT:
A semiconductor device with an increased channel length and a method for fabricating the same are provided. The semiconductor device includes: a substrate with an active region including a planar active region and a prominence active region formed on the planar active region; a gate insulation layer formed over the active region; and a gate structure including at least one gate lining layer encompassing the prominence active region on the gate insulation layer.

REFERENCES:
patent: 6579768 (2003-06-01), Thwaite et al.
patent: 4-212466 (1992-08-01), None
patent: 10-261795 (1998-09-01), None
patent: 2000-269237 (2000-09-01), None
patent: 1999-006027 (1999-01-01), None
patent: 2003-65631 (2003-08-01), None

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