Semiconductor device having sidewall portion with silicon...

Details Semiconductor device having sidewall portion with silicon... Semiconductor device having sidewall portion with silicon...

2006-02-17

2008-10-28

Elms, Richard T. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000

Reexamination Certificate

active

07443000

ABSTRACT:
A semiconductor device includes (i) a semiconductor layer, (ii) a first insulating film formed in the semiconductor layer, (iii) a conductive film continuously formed on the semiconductor layer and the first insulation film in a line shape, (iv) a second insulating film formed between the conductive film and the semiconductor layer along the conductive film, (v) a sidewall portion which is formed on a sidewall of the conductive film along the conductive film and which includes an oxide film and a first nitride film that is formed above the semiconductor layer and separated from a region above the first insulating film through the oxide film, (vi) and impurity diffusion regions formed on a surface of the semiconductor layer on both sides of the sidewall portion.

REFERENCES:
patent: 6436767 (2002-08-01), Koishikawa
patent: 6787827 (2004-09-01), Inumiya et al.
patent: 2004/0228499 (2004-11-01), Shibata et al.
patent: 2005/0199940 (2005-09-01), Mine et al.
patent: 2003/78045 (2003-03-01), None

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