Method for etching high aspect-ratio multilevel contacts

Details Method for etching high aspect-ratio multilevel contacts Method for etching high aspect-ratio multilevel contacts

1998-04-17

1999-05-25

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

438734, 438712, 216 70, 216 76, H01L 213065, H01L 21311

Patent

active

059069481

ABSTRACT:
A method for etching dielectric layers is disclosed. A first etch of the dielectric layers is performed with a gas chemistry comprising C.sub.4 F.sub.8 flowing at about 10 sccm to about 25 sccm and CH.sub.3 F flowing at about 5 sccm to about 20 sccm. A second etch of the dielectric layers is performed with the gas chemistry and flow rates of gases which are about 10% to about 40% greater than the flow rates of gases in the first etch.

REFERENCES:
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5476816 (1995-12-01), Mautz et al.

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