Method for reduced N+ diffusion in strained Si on SiGe...

Details Method for reduced N+ diffusion in strained Si on SiGe... Method for reduced N+ diffusion in strained Si on SiGe...

2003-09-09

2008-08-12

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000

Reexamination Certificate

active

07410846

ABSTRACT:
The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.

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