Semiconductor device with shallow trench isolation which...

Details Semiconductor device with shallow trench isolation which... Semiconductor device with shallow trench isolation which...

2004-12-22

2008-08-19

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S071000, C257S298000, C257S301000, C257S304000, C257SE27084

Reexamination Certificate

active

07414278

ABSTRACT:
The semiconductor device comprises a semiconductor substrate10with a trench16aand a trench16bformed in; a device isolation film32aburied in the trench16aand including a liner film including a silicon nitride film20and an insulating film28of a silicon oxide-based insulating material; a device isolation film32bburied in the bottom of the trench16b; and a capacitor formed on a side wall of an upper part of the second trench16band including an impurity diffused region40as a first electrode, a capacitor dielectric film43of a silicon oxide-based insulating film and a second electrode46.

REFERENCES:
patent: 6573548 (2003-06-01), Leung et al.
patent: 6638813 (2003-10-01), Tzeng et al.
patent: 2004/0129965 (2004-07-01), Chen
patent: 2004/0137667 (2004-07-01), Ogawa et al.
patent: 2004/0212035 (2004-10-01), Yeo et al.
patent: 1507658 (2004-06-01), None
Chinese Office Action dated Sep. 7, 2007 issued in corresponding Application No. 200510004566.2.

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