Methods for fabricating a metal layer pattern

Details Methods for fabricating a metal layer pattern Methods for fabricating a metal layer pattern

2005-06-08

2008-10-07

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S608000

Reexamination Certificate

active

07432203

ABSTRACT:
Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio.

REFERENCES:
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patent: 5990007 (1999-11-01), Kajita et al.
patent: 6036876 (2000-03-01), Chen et al.
patent: 6451691 (2002-09-01), Song et al.
patent: 6589657 (2003-07-01), Dannenberg
patent: 2003/0035906 (2003-02-01), Memarian et al.

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