Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-12
2008-10-14
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257SE21209, C257SE21682, C438S156000, C438S257000, C438S593000
Reexamination Certificate
active
07436019
ABSTRACT:
A non-volatile memory array has word lines coupled to floating gates, the floating gates having an upper portion that is adapted to provide increased surface area, and thereby, to provide increased coupling to the word lines. Shielding between floating gates is also provided. The upper portion covers part of a lower portion of the floating gate and leaves a part of the lower portion uncovered. A control gate is coplanar with a top surface of the upper portion, a vertical side of the upper portion, and the uncovered portion of the lower portion.
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Higashitani Masaaki
Lutze Jeffrey W.
Pham Tuan
Le Dung A.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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