Magnetoresistive effect element and magnetic memory

Details Magnetoresistive effect element and magnetic memory Magnetoresistive effect element and magnetic memory

2006-03-20

2008-08-19

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C257S295000

Reexamination Certificate

active

07414880

ABSTRACT:
A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.

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Youfeng Zheng, et al., “Switching Field Variation in Patterned Submicron Magnetic Film Elements”, J. Appl. Phys., vol. 81, No. 8, Apr. 15, 1997, pp. 5471-5473.

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