Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-15
2008-10-21
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S317000, C257SE21375, C257SE21410, C365S185280, C365S226000, C438S238000, C438S259000
Reexamination Certificate
active
07439572
ABSTRACT:
A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injecton from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.
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Chen Bomy
Frayer Jack Edward
Lee Dana
Tran Hieu Van
DLA Piper (LLP) US
Nguyen Dao H
Silicon Storage Technology, Inc.
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