Semiconductor device having a recess channel and method for...

Details Semiconductor device having a recess channel and method for... Semiconductor device having a recess channel and method for...

2005-12-06

2008-10-28

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000

Reexamination Certificate

active

07442990

ABSTRACT:
Provided is a semiconductor device having recess channel, comprising a semiconductor substrate having first and second trenches disposed to cross each other on both sides of an active region among adjoining regions between an active region and element-isolation films; a gate insulation film disposed on the semiconductor substrate of the active region; a first gate line disposed on the gate insulation film, and crossing the active region and overlapping with the first trench; and a second gate line disposed on the gate insulation film, and crossing the active region while overlapping with the second trench.

REFERENCES:
patent: 7244650 (2007-07-01), Suh
patent: 2004/0150056 (2004-08-01), Yang et al.
patent: 2004/0195608 (2004-10-01), Kim et al.
patent: 2005/0077568 (2005-04-01), Park et al.
patent: 2006/0205162 (2006-09-01), Suh

Affiliated with

Also associated with

Rating

Semiconductor device having a recess channel and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a recess channel and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a recess channel and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4007235