Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-08-29
2008-10-21
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C134S001300, C438S974000, C257SE21485
Reexamination Certificate
active
07439189
ABSTRACT:
The invention concerns a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon beneath the SiGe layer. The strained silicon layer is denuded by a step of selective etching of the SiGe layer by dispensing an etching solution onto the rotating wafer. Selective etching is then followed by a step of cleaning the surface of the strained silicon layer with an aqueous ozone solution dispensed onto the rotating wafer.
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Lindsay, Jr. Walter L
Patel Reema
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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