Semiconductor device including direct contact between...

Details Semiconductor device including direct contact between... Semiconductor device including direct contact between...

2006-07-25

2008-08-26

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C438S393000

Reexamination Certificate

active

07417274

ABSTRACT:
A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.

REFERENCES:
patent: 6590252 (2003-07-01), Kutsunai et al.
patent: 7151288 (2006-12-01), Imai et al.
patent: 2004-6593 (2004-01-01), None

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