Semiconductor device including a high voltage generation...

Details Semiconductor device including a high voltage generation... Semiconductor device including a high voltage generation...

2006-11-29

2008-08-19

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S189090, C365S226000, C327S536000

Reexamination Certificate

active

07414890

ABSTRACT:
A semiconductor memory device comprises a first pump clock generator configured to generate a first pump clock signal based on a first power supply voltage. The device also comprises a first charge pump configured to generate a first pump output voltage in response to the first pump clock signal. The device also comprises a second pump clock generator configured to generate a second pump clock signal based on the first pump output voltage. The device also comprises a second charge pump configured to generate a second pump output voltage in response to the second pump clock signal. The device also comprises a third pump clock generator configured to generate a third pump clock signal based on the first power supply voltage. The device also comprises a third charge pump configured to generate a third pump output voltage in response to the third pump clock signal.

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