Semiconductor memory device having memory cell section and...

Details Semiconductor memory device having memory cell section and... Semiconductor memory device having memory cell section and...

2005-11-22

2008-10-28

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000, C257S397000, C257SE27103

Reexamination Certificate

active

07442985

ABSTRACT:
An element isolating region for separating an element region of a semiconductor layer is formed in a peripheral circuit section of a semiconductor memory device, and a first conductive layer is formed with the element region with a first insulating film interposed therebetween. A second conductive layer is formed on the first conductive layer to extend into the element isolating region. A surface of that section of the second conductive layer which is positioned within the element isolating region is exposed, and a third conductive layer is formed on the second conductive layer with a second insulating film interposed therebetween. Further, a contact is electrically connected to an exposed surface of the second conductive layer.

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U.S. Appl. No. 11/283,742, filed Nov. 22, 2005, Ichige et al.

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