Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-03
2008-10-07
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S508000, C438S508000, C438S508000
Reexamination Certificate
active
07432196
ABSTRACT:
The invention provides a semiconductor chip manufacturing method, including a step of forming a front-surface-side concave portion in a semiconductor substrate having a front surface and a rear surface, a functional device being formed on the front surface, the front-surface-side concave portion being formed in the front surface and having a predetermined depth smaller than a thickness of the semiconductor substrate; a dummy plug forming step of supplying nonmetallic material into the front-surface-side concave portion and embedding a dummy plug made of the nonmetallic material; a thinning step of removing a part of the rear surface of the substrate and thinning the semiconductor substrate so that the thickness of the semiconductor substrate becomes smaller than the depth of the front-surface-side concave portion and so that the front-surface-side concave portion is formed into a through-hole; a dummy plug removing step of removing the dummy plug; and a step of supplying metallic material into the through-hole and forming a penetration electrode.
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Nemoto Yoshihiko
Takahashi Kenji
Tanida Kazumasa
Hoang Quoc
Kabushiki Kaisha Toshiba
Rabin & Berdo PC
Renesas Technology Corp.
Rohm & Co., Ltd.
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