Silicon-on-insulator device

Details Silicon-on-insulator device Silicon-on-insulator device

2004-06-08

2008-10-21

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000

Reexamination Certificate

active

07439585

ABSTRACT:
A Silicon on Insulator (SOI) device is disclosed wherein an extension of P-type doping (303) is implanted between the buried oxide layer of the device and the SOI layer. The extension is of a size and shape to permit the source (309) to be biased at a voltage significantly less than the handler wafer (304) and drain, a condition under which prior art SOI devices may not properly operate.

REFERENCES:
patent: 5381818 (1995-01-01), Nendzig et al.
patent: 6404015 (2002-06-01), Emmerik et al.
Apel U et al: “A 100-V Lateral DMOS Transistor With a 0.3-Micrometer Channel in a 1-Micrometer Silicon-Film-on-Insulator-on-Silicon” IEEE Transactions on Electron Devices, vol. 38, No. 7, Jul. 1991.

Affiliated with

Also associated with

Rating

Silicon-on-insulator device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-on-insulator device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4003392