Method for doping impurities, and for producing a...

Details Method for doping impurities, and for producing a... Method for doping impurities, and for producing a...

2005-01-24

2008-10-14

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S558000, C438S562000, C257SE21148

Reexamination Certificate

active

07435668

ABSTRACT:
A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.

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patent: 5712199 (1998-01-01), Nakagawa et al.
patent: 6489225 (2002-12-01), Ross et al.
patent: 2004/0029364 (2004-02-01), Aoki et al.
patent: 2005/0056828 (2005-03-01), Wada et al.

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