Semiconductor device having internal stress film

Details Semiconductor device having internal stress film Semiconductor device having internal stress film

2007-04-05

2008-08-26

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07417289

ABSTRACT:
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

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Shimizu, A., et al., “Local Mechanical-Stress Comtrol (LMC): A New Technique for CMOS—Performance Enhancement”, 2001, IEDM 01, p. 19.4.1-19.4.4.

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