Method for fabricating semiconductor device and...

Details Method for fabricating semiconductor device and... Method for fabricating semiconductor device and...

2006-02-03

2008-10-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S618000, C438S733000, C257SE21170, C257SE21218, C257SE21229, C257SE21277, C257SE21304, C257SE21579

Reexamination Certificate

active

07439185

ABSTRACT:
A method of fabricating a semiconductor device having an air-gapped multilayer interconnect wiring structure is disclosed. After having formed a first thin film on or above a substrate, define a first opening in the first thin film. Then, deposit a conductive material in the first opening. Then form a second thin film made of a porous material above the first thin film with the conductive material being deposited in the first opening. Next, define in the second thin film a second opening extending therethrough, followed by deposition of a conductive material in the second opening. The first thin film is removed through voids in the second thin film after having deposited the conductive material in the second opening. An integrated semiconductor device as manufactured thereby is also disclosed.

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patent: 2003-060032 (2003-02-01), None
patent: 2004-153280 (2004-05-01), None

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