Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-07
2008-10-14
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S768000, C257S757000, C257S758000, C438S650000, C438S652000, C438S761000, C438S251000, C438S253000, C438S252000
Reexamination Certificate
active
07436067
ABSTRACT:
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g., ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g., ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices.
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Basceri Cem
Sandhu Gurtej
Dang Phuc T
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Tran Thanh Y
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