Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-30
2008-08-05
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S666000, C438S684000, C257SE21585
Reexamination Certificate
active
07407886
ABSTRACT:
A contact plug structure for a checkerboard dynamic random access memory comprises a body portion, two leg portions connected to the body portion and a dielectric block positioned between the two leg portions. Each leg portion is electrically connected to a deep trench capacitor arranged in an S-shape manner with respect to the contact plug structure via a doped region isolated by a shallow trench isolation structure. Preferably, the body portion and the two leg portions can be made of the same conductive material selected from the group consisting of polysilicon, doped polysilicon, tungsten, copper and aluminum, while the dielectric block can be made of material selected from the group consisting of borophosphosilicate glass. Particularly, the contact plug can be prepared by dual-damascene technique. Since the overlapped area between the contact plug structure and a word line can be dramatically decreased, the bit line coupling (BLC) can be effectively reduced.
REFERENCES:
patent: 5924008 (1999-07-01), Michael et al.
patent: 6117785 (2000-09-01), Lee et al.
patent: 6479377 (2002-11-01), Tang et al.
patent: 7262127 (2007-08-01), Ishikawa
patent: 2003/0129840 (2003-07-01), Kumar et al.
patent: 2006/0286796 (2006-12-01), Nagel et al.
Baumeister Bradley W.
Fulk Steven J
Oliff & Berridg,e PLC
Promos Technologies Inc.
LandOfFree
Method for preparing a contact plug structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preparing a contact plug structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preparing a contact plug structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4001012