Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-15
2008-10-07
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S488000, C257SE21413
Reexamination Certificate
active
07432140
ABSTRACT:
A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.
REFERENCES:
patent: 6274888 (2001-08-01), Suzuki et al.
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6703289 (2004-03-01), Muramatsu et al.
Ting Chin-Lung
Wang Cheng-Chi
Chi Mei Optoelectronics Corp.
Malsawma Lex
Thomas Kayden Horstemeyer & Risley
LandOfFree
Thin film transistor, thin film transistor substrate, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, thin film transistor substrate, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, thin film transistor substrate, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4000635