Semiconductor device with dummy conductors

Details Semiconductor device with dummy conductors Semiconductor device with dummy conductors

2007-01-08

2008-10-07

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000, C257SE23142

Reexamination Certificate

active

07432556

ABSTRACT:
At least a laminate of a gate insulating film6and a gate electrode7and an active region13are formed on a silicon substrate1, and an underlying interlayer insulating film10is further formed. Then, a conductor11aconnected to the gate electrode7, and a conductor11bthat is a dummy conductor and is connected to the active region13are formed simultaneously on the underlying interlayer insulating film10. Thereafter, an interlayer insulating film12is formed on the underlying interlayer insulating film10by a plasma process. At this time, charging current from a plasma14is emitted through the conductor11b, which is a dummy conductor.

REFERENCES:
patent: 6078074 (2000-06-01), Takebuchi et al.
patent: 6559485 (2003-05-01), Aoyama
patent: 6717209 (2004-04-01), Kim et al.
patent: 6717267 (2004-04-01), Kunikiyo
patent: 2001/0039079 (2001-11-01), Shin
patent: 10-173157 (1998-06-01), None
patent: 11-74523 (1999-03-01), None

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