SRAM memory semiconductor integrated circuit device

Details SRAM memory semiconductor integrated circuit device SRAM memory semiconductor integrated circuit device

2005-07-26

2008-08-05

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27098, C257SE21661, C257S296000, C257S392000, C438S199000, C438S275000

Reexamination Certificate

active

07408231

ABSTRACT:
In an integrated circuit device, there are various optimum gate lengths, thickness of gate oxide films, and threshold voltages according to the characteristics of circuits. In a semiconductor integrated circuit device in which the circuits are integrated on the same substrate, the manufacturing process is complicated in order to set the circuits to the optimum values. As a result, in association with deterioration in the yield and increase in the number of manufacturing days, the manufacturing cost increases. In order to solve the problems, according to the invention, transistors of high and low thresholds are used in a logic circuit, a memory cell uses a transistor of the same high threshold voltage and a low threshold voltage transistor, and an input/output circuit uses a transistor having the same high threshold voltage and the same concentration in a channel, and a thicker gate oxide film.

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Hiroki Morimura and Nobutaro Shibata, “A 1-V 1-Mb SRAM for Portable Equipment”, 1996, pp. 61-66, Kanagawa-ken, Japan.

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