Semiconductor memory device storing redundant replacement...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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Details

C365S225700, C365S230030, C365S230010

Reexamination Certificate

active

07433251

ABSTRACT:
Column redundancy data storage circuit blocks storing column redundancy data for repairing defective columns are arranged in correspondence to memory cell array blocks, respectively. The storage data of the column redundancy data storage circuits is transferred to redundancy data hold circuits arranged in spare column decoder bands adjacent to the data paths for transferring internal data, and are decoded for selection of a page in the spare decoder bands in column access. Therefore, it is possible to reduce the occupation area of a fuse program circuit which programs redundancy data for repairing a defective column.

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