Power semiconductor with functional element guide structure

Details Power semiconductor with functional element guide structure Power semiconductor with functional element guide structure

2005-05-26

2008-10-21

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29200, C257SE29201, C257SE29257, C257SE29260, C257SE21655, C257SE21585

Reexamination Certificate

active

07439579

ABSTRACT:
A trench transistor is described. In one aspect, the trench transistor has a cell array having a plurality of cell array trenches and a plurality of mesa zones arranged between the cell array trenches, and a semiconductor functional element formed in one of the mesa zones. A current flow guiding structure is provided in the mesa zone in which the semiconductor functional element is formed, said structure being formed at least partly below the semiconductor functional element and being configured such that vertically oriented current flows out of the semiconductor functional element or into the semiconductor functional element are made more difficult and horizontally oriented current flows through the semiconductor functional element are promoted.

REFERENCES:
patent: 5691555 (1997-11-01), Zambrano et al.
patent: 5821580 (1998-10-01), Kuwahara
patent: 6049408 (2000-04-01), Tada
patent: 6144085 (2000-11-01), Barker
patent: 6180966 (2001-01-01), Kohno et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 6621121 (2003-09-01), Baliga
patent: 6806533 (2004-10-01), Henninger et al.
patent: 6885062 (2005-04-01), Zundel et al.
patent: 2002/0056872 (2002-05-01), Baliga
patent: 2004/0104427 (2004-06-01), Hao et al.
patent: 2005/0242392 (2005-11-01), Pattanayak et al.

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