Method of forming plug of semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21226, C438S653000

Reexamination Certificate

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07442639

ABSTRACT:
A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact hole for partially exposing the metal wiring by selectively etching the interlayer dielectric layer, annealing the semiconductor substrate having the contact hole using NH3gas, plasma processing the annealed semiconductor substrate using the NH3, and forming a barrier layer on the interlayer dielectric layer having the contact hole.

REFERENCES:
patent: 6069073 (2000-05-01), Kim et al.
patent: 6531389 (2003-03-01), Shue et al.
patent: 6562416 (2003-05-01), Ngo et al.
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6893953 (2005-05-01), Hoshino et al.
patent: 2002/0127840 (2002-09-01), Smith et al.
patent: 2002/0162736 (2002-11-01), Ngo et al.
patent: 2004/0063310 (2004-04-01), Ngo et al.
patent: 2005/0009325 (2005-01-01), Chung et al.
patent: 2005/0159012 (2005-07-01), Ohto et al.
patent: 07-273120 (1995-10-01), None

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