Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2004-11-15

2008-10-28

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S244000

Reexamination Certificate

active

07442984

ABSTRACT:
An active region is provided which includes a plurality of active region columns extending in a first direction and a plurality of active region rows extending in a second direction substantially orthogonal to the first direction and having concave portions. Floating electrodes and control electrodes are provided on the active region columns. An interlayer insulating film formed as a layer below an upper wiring is provided on the active region and the control electrodes. Conductive sections that electrically connect the upper wiring and the active region are respectively provided on the concave portions on the active region rows.

REFERENCES:
patent: 4935791 (1990-06-01), Namaki et al.
patent: 5204542 (1993-04-01), Namaki et al.
patent: 5731609 (1998-03-01), Hamamoto et al.
patent: 6881659 (2005-04-01), Park et al.
patent: 1-181572 (1989-07-01), None
Applicant's Prior Art Figure 3-1 (Marked Up Figure 3-1 (b)).
Applicant's Prior Art Figure 3-1 (Marked Up/Highlighted Figure 3-1 (b)).

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