Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-11-26
2008-10-28
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000
Reexamination Certificate
active
07442989
ABSTRACT:
This invention is intended to improve reliability of a nonvolatile semiconductor memory device and reduces a memory cell size of the nonvolatile semiconductor memory device. A memory cell which includes source/drain diffusion layers in a p-type well formed in a silicon substrate, silicon nitride dots which are located between silicon oxide films and into which charges are injected, a control gate212,and assist gates is formed. Programming is conducted to the memory cell by injecting electrons into the drain-side silicon nitride dots or the source-side silicon nitride dots. Since silicon nitride serving as a charge injected section is in the form of dots, it is possible to suppress movement of the charges in a channel direction, to prevent the charges on a source end portion and those on a drain end portion from being mixed together, and to improve charge holding characteristic of the memory cell. Even in the case where a gate length is shortened, the charge holding characteristic can be secured.
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Kobayashi Takashi
Mine Toshiyuki
Dickey Thomas L
Miles & Stockbridge P.C.
Renesas Technology Corp.
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